马志军（Ma Zhijun)
电子邮箱：mazhijun@hubu.edu.cn 研究方向： 无机纳米器件(Inorganic Nanometer Devices) 学 位：博士（ 湖北大学） 职 称：副教授/硕士生导师 |
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研究工作简介
马志军，博士，副教授，硕士生导师。主要从事无机纳米器件等方面的研究工作。主持国家自然科学基金面上项目1项，完成湖北省自然科学基金1项。在Appl. Phys. Lett., J. Appl. Phys.等国内外学术刊物上发表科研论文30余篇，其中SCI收录20余篇；获武汉市科技进步奖一等奖1项。
代表性成果
1. Ying Liu, Yajun Qi, Peng Zhou, Changxin Guan, Hao Chen, Jinzhao Wang, Zhijun Ma*and Tianjin Zhang, Mechanisms of resistive switching in BiFeO3 thin films modulated by bottom electrode, Journal of Physics D: Applied Physics, 2018, 51: 025303.
2. Z.J. Ma, L.Q. Li, K. Liang, T.J. Zhang, N. Valanoor, H.P. Wu, Y.Y. Wang, X.Y. Liu, Enhanced tunneling electroresistance effect in composite ferroelectric tunnel junctions with asymmetric electrodes, MRS Communications, 2018, 1-6, doi:10.1557/mrc.2018.212.
3. Tianjin Zhang, Peng Zhou, Zhijun Ma*, Kun Liang, Duofa Wang and Duanming Zhang, Recent progress of renewable energy, smart grid, and nanomaterial (AV Akademikerverlag, 2017), Chapt.5, p.89, ISBN 978-3-330-52058-5.
4. Z J Ma, G Chen, P Zhou, Z H Mei and T J Zhang, Ferroelectric tunneling under bias voltages, Journal of Physics D: Applied Physics, 2017, 50: 015303.
5. K. Liang, P. Zhou, Z. J. Ma, Y. J. Qi, Z. H. Mei, T. J. Zhang, Multiferroic magnetoelectric coupling effect of bilayer La1.2Sr1.8Mn2O7/PbZr0.3Ti0.7O3 complex thin film, Physics Letters A, 2017, 381:1504-1509.
6. Geng Chen, Zhijun Ma*, Peng Zhou, Zhiheng Mei, Kun Liang, and Tianjin Zhang, Four-state memory based on ferroelectric tunnel junctions with double ferroelectric layers, Phys. Status Solidi A, 2017, 1700048
7. Zhijun Ma, Peng Zhou, Tianjin Zhang, Kun Liang, and Paul K Chu, Resonance-enhanced electroresistance-magnetoresistance effects in multiferroic tunnel junctions, Mater. Res. Express, 2015, 2: 046303.
8. Zhijun Ma, Tianjin Zhang, Kun Liang, Yajun Qi, Duofa Wang, Jinzhao Wang, and Juan Jiang, Ferroelectric tunnel junctions with multi-quantum well structures, Appl. Phys. Lett., 2014, 104: 222904.
9. Z. J. Ma, T. J. Zhang, R. K. Pan, M. G. Duan, M. He, Optimal dielectric thickness for ferroelectric tunnel junctions with a composite barrier, J. Appl. Phys.2012, 111, 074311–074314.
10. Ma Zhijun, Zhang Tianjin, Pan Ruikun, Liang Kun, Wang Duofa, Wang Jingang, Wang Jinzhao, Jiang Juan, Qi Yajun, Chu Huifang, Tunneling electroresistance effect in Pt/MgO/Pt/PbTiO3/Pt ferroelectric tunnel junctions. Appl. Phys. Lett., 2012, 101: 022906.
